Title: β–Ga2O3 Materials Development at Air Force Research Laboratory
Abstract: In this talk, we will discuss the β-Ga2O3 materials development at Air Force Research Laboratory (AFRL). β- Ga2O3 has been of interest due to its large intrinsic breakdown field for high voltage and high power electronics applications. AFRL has been developing electronics materials for AF since the days of early Si development and now is at the forefront of β-Ga2O3 electronics materials development. We will first review the substrate development with Northrop Grumman Synoptics supported by AFRL. Next, we will consider the in-house MBE work at the Materials and Manufacturing Direct within AFRL. We will briefly explain the Ga2O3 MBE growth mechanism and then deep dive into the chemistry and physics of group IV n-type dopants such as Si and Ge. Compensating acceptors such Fe and Mg and their properties will also be discussed before we end our doping discussion on a 110 meV unintentional dopant. Last, we will briefly discuss device related technologies including a self-aligned process and top-side heat extraction.
Biography: Shin Mou is a Senior Research Engineer at the Materials & Manufacturing Directorate, Air Force Research Laboratory. He received his BS and MS in Electrical Engineering from the National Taiwan University, Taiwan, and his PhD in Electrical & Computer Engineering from University of Illinois at Urbana-Champaign. He was a recipient of the National Research Council Postdoctoral Fellowship (2009-2011.) He previously worked at IBM as a CMOS device engineer/scientist. His doctoral research was on infrared photodetectors based on InAs/GaSb type-II superlattices. His current research interests include ultra-wide bandgap materials such as Ga2O3 and AlN for electronics and optoelectronics applications.
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