Date(s) - 28 Feb 2020
10:00 AM - 11:30 AM
3043 ECpE Building Addition
Title: Next-Generation Power Electronics Enabled by Wide Bandgap Semiconductors
Abstract: Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) are revolutionizing our lives in numerous ways from solid-state lighting, to communication, to power conversions. They are enabling the next-generation electronics and photonics such as LEDs and lasers, RF power amplifiers, and power electronics with amazing performance and functionalities. For example, GaN power electronics is significantly impacting how electrical energy is processed and utilized in various applications such as electric vehicles, smart grid, renewable energy, and data centers powering IoT, AI, cloud computing, etc. With the fast-growing power demand, state-of-the-art Si technology is approaching its efficiency limits at high power and high frequency due to fundamental material limitations. In U.S., the power conversion losses included by Si technology account for nearly 10% of the total electricity, which is more than all the electricity generated by renewable energy sources combined. Due to GaN’s superior material properties, GaN power devices are expected to outperform their Si counterparts with higher energy efficiency, higher power density, faster switching, and smaller form factor. In this talk, I will discuss critical aspects in the development of kV-class GaN power devices including materials engineering, vertical architectures, selective area doping and edge termination. I will also talk about the potential of GaN for RF, sensing, and quantum applications. Finally, I will discuss new opportunities in the emerging ultra-wide bandgap semiconductors such as Ga2O3, AlN and diamond for future power electronics and photonics.
Bio: Houqiang Fu is a postdoctoral researcher in the School of Electrical, Computer and Energy Engineering (ECEE) at Arizona State University (ASU). He received his PhD degree in Electrical Engineering from ASU in 2019 with the Palais’ Outstanding Doctoral Student Award, the highest honor from the School of ECEE. His research interests are wide bandgap semiconductors (e.g., GaN and Ga2O3) based electronic and photonic devices for power and energy systems, RF/microwave, and sensing and quantum applications. He has authored/co-authored over 40 peer-reviewed journal papers, over 60 conference presentations and abstracts, 2 book chapters, and 7 pending patents. Dr. Fu is also the recipient of 2018 ASU Outstanding Research Award.
Seminar Host: Degang Chen