Research Interests:

Broad research interests span the fields of solid-state electronics, optoelectronics and photonics, semiconductors, device physics, and nanotechnology. Specific interests include wide and ultrawide bandgap semiconductors (GaN, Ga2O3, AlN, BN and diamond), power electronics and ICs , RF/microwave ICs (MMICs), waveguides, nonlinear optics, quantum photonics, new physics, new materials, and new devices for future solid-state electronics and photonics.


Research Details:

The research at the Semiconductor Materials and Devices Group is focused on the development of novel and advanced solid-state devices and systems for power electronics, energy efficiency, renewable energies, next-generation communication systems, extreme-environment applications (e.g., high temperature and radiation), UV-visible integrated photonics, and biochemical sensing applications. Our research involves MOCVE/MBE epitaxial growth, nanofabrication, and characterization of electronic and optical semiconductor materials, devices, and systems.


Our research can be categorized into the following Thrust Areas:

Thrust Area 1: Next-Generation Power Electronics and Systems based on Wide Bandgap Semiconductors.


Thrust Area 2: Sensing in Diverse Environments including Extreme Electronics, Electro-chemical Sensors, Biosensors and Flexible Electronics.


Thrust Area 3: High-Frequency and High-Power RF/Microwaves Electronics and ICs.


Thrust Area 4: MOCVD/MBE Epitaxial Growth, Fundamental Physics and Electronic and Optical Properties of Novel Materials.

Group News

01/2022—Dinusha’s paper on Ga2O3/GaN heterojunction p-n diodes was accepted to IEEE Journal of the Electron Devices Society. Congratulations!

11/2021—Dawei’s paper on designing delta-doped AlGaO/GaO HEMTs was accepted to IEEE Transactions on Electron Devices. Congratulations!

07/2021—Our comprehensive review papers (Part I and Part II) on vertical GaN power devices are published in Transactions on Electron Devices!

04/2021—Our review paper on selective area doping and regrowth for vertical GaN power devices is accepted to Materials Today (Impact Factor: 26.416), which is one of the most highly respected sources of news and reviews in materials science. Congratulations!


CONTACT: Dr. Houqiang Fu


Address: Coover Hall
2520 Osborn Drive
Ames, IA 50011