Opennings

PhD Positions Available

We are always looking for motivated PhD students to join our dynamic and fast-growing group. You will have the unique opportunity to work on the third-generation semiconductors: wide bandgap (WBG) semiconductors such as GaN, Ga2O3, AlN, and BN. You will be exposed to and gain experience in the whole life-cycle of semiconductors, from MOCVD growth, to device design and simulation, to nanofabrication, to materials and devices characterizations, and circuits and system integration.

These exciting and interesting WBG semiconductors are at the forefront of semiconductor materials and devices research, and they are revolutionizing our lives in numerous ways (e.g, LEDs, lasers, power electronics, RF/mm Wave devices for 5G, PICs). This is a research area where you can devote your passion and make a lasting impact. Ideal candidates should have a B.S. or M.S. degree with background in electrical engineering, power electronics and circuits, physics, materials science, photonics, optical engineering, or other related areas. The positions will remain open until filled by qualified candidates. If you are interested, please email your CV to Prof. Fu at houqiang@iastate.edu.

Group News

01/2022—Dinusha’s paper on Ga2O3/GaN heterojunction p-n diodes was accepted to IEEE Journal of the Electron Devices Society. Congratulations!

11/2021—Dawei’s paper on designing delta-doped AlGaO/GaO HEMTs was accepted to IEEE Transactions on Electron Devices. Congratulations!

07/2021—Our comprehensive review papers (Part I and Part II) on vertical GaN power devices are published in Transactions on Electron Devices!

04/2021—Our review paper on selective area doping and regrowth for vertical GaN power devices is accepted to Materials Today (Impact Factor: 26.416), which is one of the most highly respected sources of news and reviews in materials science. Congratulations!

 

CONTACT: Dr. Houqiang Fu

Email: houqiang@iastate.edu

Address: Coover Hall
2520 Osborn Drive
Ames, IA 50011