News

Dinusha and Dawei’s conference abstracts were accepted to 2022 Compound Semiconductor Week (CSW 2022) and the 48th International Symposium on Compound Semiconductors (ISCS 2022). Congratulations!

03/2022


Two papers were accepted to 2022 MRS Spring Meeting! Congratulations!

03/2022


Dinusha’s paper on Ga2O3/GaN heterojunction p-n diodes was accepted to IEEE Journal of  the Electron Devices Society. Congratulations!

01/2022


Dawei’s paper on designing delta-doped AlGaO/GaO HEMTs was accepted to IEEE Transactions on Electron Devices. Congratulations!

11/2021


Dr. Fu was awarded the ISU Regents Innovation Fund Award.

09/2021


Our comprehensive review papers (Part I and Part II) on vertical GaN power devices are published in Transactions on Electron Devices!

07/2021


Our review paper on selective area doping and regrowth for vertical GaN power devices is accepted to Materials Today (Impact Factor: 26.416), which is one of the most highly respected sources of news and reviews in materials science. Congratulations!

04/2021


Dinusha and Dawei’s conference abstracts were accepted to 2021 Compound Semiconductor Week (CSW 2021) and the 47th International Symposium on Compound Semiconductors (ISCS 2021). Congratulations!

04/2021


Two papers were accepted to 63rd Electronic Materials Conference (63rd EMC)! Congratulations!

03/2021


Dinusha’s conference abstract was accepted as the Late News to the 2021 MRS Spring Meeting for presentation! Congratulations!

02/2021


Dawei’s conference abstract was accepted to the 2021 MRS Spring Meeting for presentation! Congratulations!

01/2021


Dinusha joined our group as a PhD student in the ECpE department. Welcome!

01/2021


Dawei joined our group as a PhD student in the ECpE department. Welcome!

01/2021


New paper on Ga2O3 film with record-high mobility using TMGa MOCVD growth was accepted to Applied Physics Letters in the  Ultrawide Bandgap Semiconductor special issue. Congratulations!

12/2020


New paper on (001) and (-201) Ga2O3 DLTS measurements was published in Journal of Applied Physics. Congratulations!

12/2020


Better etching enhances selective area doping for vertical GaN power devices,” Compound Semiconductor.

12/2019


First steps to high temperature GaN memory?” Compound Semiconductor.

04/2019


New memory device can take the heat,” IEEE Spectrum.

03/2019


Vertical gallium nitride Schottky diodes with single and double drift layers,” Semiconductor Today, Silicon Valley Microelectronics, etc.

10/2017


Aluminium nitride Schottky barrier diodes with breakdown more than 1 kV,” Semiconductor Today, Silicon Valley Microelectronics,  Semiconductor Society (India), University of Strathclyde, China Wechat Platform, etc.

08/2017


Indium gallium nitride solar cells on non-polar and semi-polar substrates,” Semiconductor Today.

05/2017


Buffer and drift layer effects on vertical gallium nitride diodes,”

Semiconductor Today, Silicon Valley Microelectronics.

04/2017