Members

Principle Investigator

 

Houqiang Fu


Assistant Professor, Ph.D. (Google Scholar)

Email: houqiang@iastate.edu


Bio: Prof. Fu received the PhD degree in Electrical Engineering from Arizona State University (ASU) in 2019, and the BS degree in Materials Physics from Wuhan University, China in 2014. Currently, he is an Assistant Professor in the Department of Electrical and Computer Engineering at Iowa State University. He also worked as a postdoctoral researcher at ASU in 2019.

Prof. Fu’s research focuses on third-generation wide bandgap semiconductor (i.e., GaN and nitride alloys, Ga2O3 and oxide alloys, and AlN) materials and devices for applications in electronics (e.g., power electronics and ICs, RF/microwave devices and MMICs, sensors) and photonics (e.g., optoelectronics, waveguides, nonlinear optics, quantum photonics). He won the 2021 ISU Regents Innovation Fund Award, the 2019 Palais Outstanding Doctoral Award (the highest honor for ASU ECEE PhD graduates) and the 2018 ASU Outstanding Research Award. His work has been chronicled in over 110 journal and conference publications, 3 book chapters, and 2 granted patents and 10 pending patents. His research has been featured by many media outlets including IEEE Spectrum, Semiconductor Today, Compound Semiconductor, Silicon Valley Microelectronics.

 

 

Graduate Students


Dawei Wang

PhD Student

Dawei Wang received his M.S. degree in Semiconductor Material and Science from Peking University and B.S. degree in School of Electronics and Mechanics, Xidian University. His previous work focused on TiO2 transparent conductive oxide (TCO) and TiO2-based photodetectors.  He joined our research group in Spring 2021 and is currently pursuing a PhD degree in Electrical Engineering at ISU. His research of interest is Wide-Bandgap materials and Ultrawide-Bandgap materials for high-frequency devices and power devices.

 

 


Dinusha Herath Mudiyanselage

PhD Student

Dinusha Herath Mudiyanselage received his M.S. degree in Physics from Iowa State University and B.S. (Honors) in Physics in 2015 from the University of Peradeniya, Sri Lanka. He won two gold medals and academic excellence awards during his undergraduate study. He joined our research group in Spring 2021 and is currently pursuing a PhD degree in Electrical Engineering at ISU. His research mainly focuses on solid-state materials and devices based on wide bandgap semiconductors. During the free time, he likes to spend time with his family, read books and learn new things.

 

Undergraduate Students


Ohik  Kwon

Ohik Kwon is an undergraduate student in Electrical Engineering (Honors) at ISU. He studied electrical engineering for two years at the Inha University, Incheon, South Korea. He is interested in semiconductor physics and devices.

 

 

Lal Siama

Lal Siama is an undergraduate student in Electrical Engineering at ISU. He is an ISU McNair Scholar.

Group News

01/2022—Dinusha’s paper on Ga2O3/GaN heterojunction p-n diodes was accepted to IEEE Journal of the Electron Devices Society. Congratulations!

11/2021—Dawei’s paper on designing delta-doped AlGaO/GaO HEMTs was accepted to IEEE Transactions on Electron Devices. Congratulations!

07/2021—Our comprehensive review papers (Part I and Part II) on vertical GaN power devices are published in Transactions on Electron Devices!

04/2021—Our review paper on selective area doping and regrowth for vertical GaN power devices is accepted to Materials Today (Impact Factor: 26.416), which is one of the most highly respected sources of news and reviews in materials science. Congratulations!

 

CONTACT: Dr. Houqiang Fu

Email: houqiang@iastate.edu

Address: Coover Hall
2520 Osborn Drive
Ames, IA 50011